| PART |
Description |
Maker |
| DM7446 DM7446A DM7446AN 7446A DM7447A |
BCD to 7-Segment Decoders/Drivers(BCD-7娈垫?瀛?浆?㈣????/椹卞???
BCD to 7-Segment Decoders/Drivers TTL/H/L SERIES, SEVEN SEGMENT DECODER/DRIVER, INVERTED OUTPUT, PDIP16
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ASI10523 ASI1002 |
NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 200mA ,Vcc: 35 V)(NPN 纭??灏??????朵?绠??ㄤ????C绾ф?澶у?,棰??杈?500 MHz(Ic:200mA ,Vcc: 35 V))
|
ADVANCED SEMICONDUCTOR INC
|
| LM2901D LM239D LM339AD LM339N LM239AD LM239ADR2 LM |
0.022UF 10% 25V MLCC 0603 CAP,25V,X7R SMD, 0603
Quad Single Supply Comparators
ORDERING INFORMATION
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| 74HCT42 74HC42 74HC42PW 74HC42D 74HC42DB 74HC42N 7 |
BCD to decimal decoder (1-of-10)
BCD to decimal decoder 1-of-10 HCT SERIES, DECIMAL DECODER/DRIVER, INVERTED OUTPUT, PDSO16
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| HD74LS248 |
BCD-to-Seven Segment Decode/Driver with Internal Pull-up outputs
BCD-to-Seven-Segment Decoders/Drivers(internal pull-up outputs)
|
HITACHI[Hitachi Semiconductor]
|
| ISL60002BIB812 ISL60002CIH325 ISL60002CIH312 ISL60 |
Precision 1.25V & 2.50V Low Voltage FGA References(绮惧?1.25V涓?.50V浣????GA?哄?)
Precision 1.25V & 2.50V Low Voltage FGA References
Precision 1.25V & 2.50V Low Voltage FGA References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 1.25 V, PDSO3
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:6; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle; Body Style:Straight
Precision 1.25V & 2.50V Low Voltage FGA References
|
Intersil, Corp.
Intersil Corporation
|
| IS62LV1024 IS62LV1024LL IS62LV1024L IS62LV1024L-45 |
128K x 8 LOW POWER AND LOW Vcc 128K的8低功耗和低成本吓
128K*8 LOW POWER AND LOW Vcc CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM
|
Samsung Semiconductor Co., Ltd.
Glenair, Inc.
N.A.
ICSI[Integrated Circuit Solution Inc]
|
| AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F |
90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
x8 Flash EEPROM x8闪存EEPROM
x8/x16 Flash EEPROM
|
Atmel, Corp.
|
| PMO-6022SN-42UQ |
Sensitivity Range -42 ± 3 dB RL = 2.2 k?Vcc = 2.0v (1 kHz 0 dB = 1 v/Pa)
|
Mallory performance clu...
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